Abstract:
Seebeck coe cient is a property of material which shows the electrical potential di erence created by the temperature di erence. This electrical potential is useful in thermocouples and thermopower generation applications. Silicon doped germanium is a good material for thermopower generation applications. Moreover, in interface temperature measurement of bulk growth is possible with the thermoelectric property of Ge-Si alloy. Seebeck coe cient measurements are made by the small 4T technique. In this technique, potential di erence between two probes are measured and with changing the temperature of one probe potential di erence change with respect to temperature can be calculated. Seebeck coe cients of evaporation grade germanium, 5 atm% and 50 atm% silicon doped germanium has been measured. Moreover, electrical resistivity of 5-25 atm% silicon doped germanium at room temperature has been measured. Also, high temperature electrical resistivity measurements for 5 atm% and 50 atm% has been attempted.
