Archives and Documentation Center
Digital Archives

Detection of optical frequencies of metal-oxide-metal junctions

Show simple item record

dc.contributor Graduate Program in Physics.
dc.contributor.advisor Skarlatos, Yani.
dc.contributor.author Yanardağ, Sırma Başak.
dc.date.accessioned 2023-03-16T10:38:01Z
dc.date.available 2023-03-16T10:38:01Z
dc.date.issued 2008.
dc.identifier.other PHYS 2008 Y36
dc.identifier.uri http://digitalarchive.boun.edu.tr/handle/123456789/13693
dc.description.abstract In this thesis, optoelectronic characteristics of metal-oxide-metal junctions are investigated. The junctions are made of aluminum. The detected current in the Al ¡ Al2O3¡Al films is due to a quantum mechanical phenomena; tunneling. Classically, if the energy of the particle is less than the height of the barrier, the particle can never pass through it. However, in quantum mechanics the electrons can penetrate into a classically forbidden region without any real tunnel even when its energy is smaller than the height of the barrier. The tunneling current depends on the thickness of the insulator, the work function of aluminum, and the applied voltage.
dc.format.extent 30cm.
dc.publisher Thesis (M.S.)-Bogazici University. Institute for Graduate Studies in Science and Engineering, 2008.
dc.subject.lcsh Optoelectronics.
dc.subject.lcsh Aluminum.
dc.subject.lcsh Tunneling (Physics)
dc.title Detection of optical frequencies of metal-oxide-metal junctions
dc.format.pages xii, 37 leaves;


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search Digital Archive


Browse

My Account