Abstract:
In this thesis, optoelectronic characteristics of metal-oxide-metal junctions are investigated. The junctions are made of aluminum. The detected current in the Al ¡ Al2O3¡Al films is due to a quantum mechanical phenomena; tunneling. Classically, if the energy of the particle is less than the height of the barrier, the particle can never pass through it. However, in quantum mechanics the electrons can penetrate into a classically forbidden region without any real tunnel even when its energy is smaller than the height of the barrier. The tunneling current depends on the thickness of the insulator, the work function of aluminum, and the applied voltage.
