Determination of density of states of n-type hydrogenated amorphous silicon by phase shift analysis of modulated photocurrent method

Kocabıyık, Ferhat.

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dc.contributor	Graduate Program in Physics.
dc.contributor.advisor	Aktaş, Gülen, 1951- .
dc.contributor.author	Kocabıyık, Ferhat.
dc.date.accessioned	2023-03-16T10:38:16Z
dc.date.available	2023-03-16T10:38:16Z
dc.date.issued	1995.
dc.identifier.other	PHYS 1995 K81
dc.identifier.uri	http://digitalarchive.boun.edu.tr/handle/123456789/13725
dc.description.abstract	Determination of density of states of hydrogenated amorphous siliconby phase shift analysis of modulated photocurrent.Determination of the energetic distribution of localized statesdue to random network and structural defects within the mobility gap of amorphous semi conductorsis of great importance for understanding the transport properties of these materials. Since there is no structural order,the band states can be only determined experimentally.In this thesis, the density of states (DOS) distribution in the energy gapof Hydrogenated n-type amorphous silicon is determined. For this purpose a The Phase shift analysis of modulated photocurrent (PSAMP) method is studied. The validity of the PSAMP theorem for the doped a-H:Si is discussed. The theorem is verified for this type of semiconductors and the distribution of the states is determined for a range of 400 meV.
dc.format.extent	30 cm.
dc.publisher	Thesis (M.S.) - Bogazici University. Institute for Graduate Studies in Science and Engineering, 1995.
dc.relation	Includes appendices.
dc.relation	Includes appendices.
dc.subject.lcsh	Semiconductor films -- Measurement.
dc.title	Determination of density of states of n-type hydrogenated amorphous silicon by phase shift analysis of modulated photocurrent method
dc.format.pages	xi, 55 leaves;