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Laser assisted growth of silicon nano-structures

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dc.contributor Graduate Program in Physics.
dc.contributor.advisor İnci, Naci.
dc.contributor.author Demirbaş, Elif.
dc.date.accessioned 2023-03-16T10:38:09Z
dc.date.available 2023-03-16T10:38:09Z
dc.date.issued 2010.
dc.identifier.other PHYS 2010 D46
dc.identifier.uri http://digitalarchive.boun.edu.tr/handle/123456789/13712
dc.description.abstract In this study, the aim is to produce homogeneous porous silicon(PS) nanostructures and then to observe the effect of resistivity of starting silicon samples. P-type silicon wafers with di erent resistivity are prepared by different anodization methods. Silicon samples fabricated by the electrochemical dissolution are characterized both optically and structurally. By the highlight of quantum con nement effect, optical characterization method is used to determine whether porous silicon nano-structures occur or not. Porous silicon samples are analysed by the Environmental Scanning Electron Microscopy(ESEM).
dc.format.extent 30cm.
dc.publisher Thesis (M.S.)-Bogazici University. Institute for Graduate Studies in Science and Engineering, 2010.
dc.subject.lcsh Porous silicon.
dc.title Laser assisted growth of silicon nano-structures
dc.format.pages ix, 22 leaves;


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