Study of law-frequency noise in amorphous silicon

Pekcan, İ. Hakan.

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dc.contributor	Graduate Program in Electrical and Electronic Engineering.
dc.contributor.advisor	Ülgen, Yekta.
dc.contributor.author	Pekcan, İ. Hakan.
dc.date.accessioned	2023-03-16T10:22:05Z
dc.date.available	2023-03-16T10:22:05Z
dc.date.issued	1987.
dc.identifier.other	EE 1987 P36
dc.identifier.uri	http://digitalarchive.boun.edu.tr/handle/123456789/13056
dc.description.abstract	In this thesis, amorphous silicon films are fabricated and their low-frequency noise properties are investigated over the range of 10 Hz to 4.4 kHz. The ohmic contacted films are produced in two different geometries using the electron gun vacuum-evaporation technique. The noise measurements carried out at low-frequencies show that, 1/f noise is dominant in this frequency region. Effects of d.c. biasing and increasing ambient temperature are also investigated; increasing temperature (> 300 °K ) decreases the low-frequency noise power level. The relationship between the hopping rate and the 1/f noise is verified. It is also shown that, the density of states near the Fermi level can be calculated from 1/f noise measurements. Amorphous silicon films are found to be noisier than the crystalline structure.
dc.format.extent	30 cm.
dc.publisher	Thesis (M.S.)- Bogazici University. Institute for Graduate Studies in Science and Engineering, 1987.
dc.relation	Includes appendices.
dc.relation	Includes appendices.
dc.subject.lcsh	Amorphous semiconductors.
dc.subject.lcsh	Silicon crystals.
dc.subject.lcsh	Thin film devices.
dc.subject.lcsh	Silicon alloys.
dc.title	Study of law-frequency noise in amorphous silicon
dc.format.pages	x, 58 leaves;