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Study of law-frequency noise in amorphous silicon
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| dc.contributor | Graduate Program in Electrical and Electronic Engineering. | |
| dc.contributor.advisor | Ülgen, Yekta. | |
| dc.contributor.author | Pekcan, İ. Hakan. | |
| dc.date.accessioned | 2023-03-16T10:22:05Z | |
| dc.date.available | 2023-03-16T10:22:05Z | |
| dc.date.issued | 1987. | |
| dc.identifier.other | EE 1987 P36 | |
| dc.identifier.uri | http://digitalarchive.boun.edu.tr/handle/123456789/13056 | |
| dc.description.abstract | In this thesis, amorphous silicon films are fabricated and their low-frequency noise properties are investigated over the range of 10 Hz to 4.4 kHz. The ohmic contacted films are produced in two different geometries using the electron gun vacuum-evaporation technique. The noise measurements carried out at low-frequencies show that, 1/f noise is dominant in this frequency region. Effects of d.c. biasing and increasing ambient temperature are also investigated; increasing temperature (> 300 °K ) decreases the low-frequency noise power level. The relationship between the hopping rate and the 1/f noise is verified. It is also shown that, the density of states near the Fermi level can be calculated from 1/f noise measurements. Amorphous silicon films are found to be noisier than the crystalline structure. | |
| dc.format.extent | 30 cm. | |
| dc.publisher | Thesis (M.S.)- Bogazici University. Institute for Graduate Studies in Science and Engineering, 1987. | |
| dc.relation | Includes appendices. | |
| dc.relation | Includes appendices. | |
| dc.subject.lcsh | Amorphous semiconductors. | |
| dc.subject.lcsh | Silicon crystals. | |
| dc.subject.lcsh | Thin film devices. | |
| dc.subject.lcsh | Silicon alloys. | |
| dc.title | Study of law-frequency noise in amorphous silicon | |
| dc.format.pages | x, 58 leaves; |
