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Study of teh D.C conductance mechanism of evaporated amorphous silicon films

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dc.contributor Graduate Program in Electrical and Electronic Engineering.
dc.contributor.advisor Ülgen, Yekta.
dc.contributor.advisor Aktaş, Gülen, 1951- .
dc.contributor.author Atağ, Yılmaz.
dc.date.accessioned 2023-03-16T10:21:19Z
dc.date.available 2023-03-16T10:21:19Z
dc.date.issued 1984.
dc.identifier.other EE 1984 At12
dc.identifier.uri http://digitalarchive.boun.edu.tr/handle/123456789/13017
dc.description.abstract In this thesis the d.c bulk characteristis of amorphous silicon films are investigated. The films are prepared by electron gun evaporation in a conventional vacuum system. Ohmic contacts are established between the silicon films and the aluminum electrodes. I-V and I-T measurements are performed in the temperaturege range, 110°K to 430°K. Room temperature measurements show that the preparation conditions such as evaporation rate, aging and subsequent annealing all affect the d.c conductivities of the films. In the low temperature range, the data analyzed with the existing models of amorphous semiconductors and the density of states near the Fermi level is calculated. The high temperature data are used to calculate the mobility gap of the amorphous silicon film. The results are then compared with the previously published work.
dc.format.extent 30 cm.
dc.publisher Thesis (M.S.) - Bogazici University. Institute for Graduate Studies in Science and Engineering, 1984.
dc.subject.lcsh Amorphous semiconductors.
dc.subject.lcsh Electric conductivity.
dc.title Study of teh D.C conductance mechanism of evaporated amorphous silicon films
dc.format.pages ix, 38 leaves;


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