High vacuum evaporation, deposition monitoring, and rate control

dc.contributor	Graduate Program in Electrical and Electronic Engineering.
dc.contributor.advisor	Balkan, Naci.
dc.contributor.author	Karyot, Turgut Berat.
dc.date.accessioned	2023-03-16T10:19:08Z
dc.date.available	2023-03-16T10:19:08Z
dc.date.issued	1982.
dc.identifier.other	EE 1982 K14
dc.identifier.uri	http://digitalarchive.boun.edu.tr/handle/123456789/12907
dc.description.abstract	In order to determine the physical properties of amorphous semiconductor materials it is required to obtain thin film layers by high vacuum evaporation technique. Physical properties of such films are known to be strongly influenced by the rate of deposition. This project therefore involves the construction of a thickness monitor and rate controller which monitors the thicness of thin film layers continuously during the evaporation process and keeps the evaporation rate constant at any desired value. The change of thickness of the thin film layer is observed by monitoring the change in the oscillation frequency of a quartz crystal situated by the side of the thin film deposit. All required functions are generated digitally.
dc.format.extent	30 cm.
dc.publisher	Thesis (M.S.) - Bogazici University. Institute for Graduate Studies in Science and Engineering, 1982.
dc.relation	Includes appendices.
dc.relation	Includes appendices.
dc.subject.lcsh	Thin films.
dc.subject.lcsh	Amorphous semiconductors.
dc.title	High vacuum evaporation, deposition monitoring, and rate control
dc.format.pages	66 leaves;