Arşiv ve Dokümantasyon Merkezi
Dijital Arşivi

High vacuum evaporation, deposition monitoring, and rate control

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dc.contributor Graduate Program in Electrical and Electronic Engineering.
dc.contributor.advisor Balkan, Naci.
dc.contributor.author Karyot, Turgut Berat.
dc.date.accessioned 2023-03-16T10:19:08Z
dc.date.available 2023-03-16T10:19:08Z
dc.date.issued 1982.
dc.identifier.other EE 1982 K14
dc.identifier.uri http://digitalarchive.boun.edu.tr/handle/123456789/12907
dc.description.abstract In order to determine the physical properties of amorphous semiconductor materials it is required to obtain thin film layers by high vacuum evaporation technique. Physical properties of such films are known to be strongly influenced by the rate of deposition. This project therefore involves the construction of a thickness monitor and rate controller which monitors the thicness of thin film layers continuously during the evaporation process and keeps the evaporation rate constant at any desired value. The change of thickness of the thin film layer is observed by monitoring the change in the oscillation frequency of a quartz crystal situated by the side of the thin film deposit. All required functions are generated digitally.
dc.format.extent 30 cm.
dc.publisher Thesis (M.S.) - Bogazici University. Institute for Graduate Studies in Science and Engineering, 1982.
dc.relation Includes appendices.
dc.relation Includes appendices.
dc.subject.lcsh Thin films.
dc.subject.lcsh Amorphous semiconductors.
dc.title High vacuum evaporation, deposition monitoring, and rate control
dc.format.pages 66 leaves;


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